跳至主要内容

Atomic Force Microscopy Studies on GaAs/In Bilayers Deposited on Si (100)

Read  full  paper  at:
http://www.scirp.org/journal/PaperInformation.aspx?PaperID=53664#.VM8pbCzQrzE

ABSTRACT
GaAs/In bilayers were prepared by RF Magnetron Sputtering in an Ar atmosphere on Si (100) substrates using high purity (95.95%) GaAs (100) and In targets. The growth temperatures were 300oC and 580oC for the high purity targets of In and GaAs, respectively. Three samples were prepared: the deposition time (td) for the GaAs layers was fixed to 30 minutes, while varied for the In layers from td = 10, 15, and 20 minutes. The morphological and optical studies of the samples were made by means of Amplitude Modulation Atomic Force Microscopy (AM-AFM). In order to analyze and correlate surface morphology and alloy composition properties, the as-prepared samples were cleaved along the [001] direction and subsequently studied by AM-AFM-micrographs. From topographic images, a statistical study of the roughness and grain size was made. Additionally, cross sectional AM-AFM-micrographs were performed for each sample, where the phase channel, which is sensitive to the material properties of the specimen, was of particular interest.
 
Cite this paper
Venegas, M. , Correa, R. , López, M. and Mora, Á. (2015) Atomic Force Microscopy Studies on GaAs/In Bilayers Deposited on Si (100). Microscopy Research, 3, 6-16. doi: 10.4236/mr.2015.31002.
 
References
[1]Borri, P., Schneider, S., Langbein, W. and Bimberg, D. (2006) Ultrafast Carrier Dynamics in InGaAs Quantum Dot Materials and Devices. Journal of Optics A: Pure and Applied Optics, 84, S33-S46.
 
[2]Zilkie, A.J., Meier, J., Mojahedi, M., Poole, P.J., et al. (2007) Carrier Dynamics of Quantum-Dot, Quantum-Dash, and Quantum-Well Semiconductor Optical Amplifiers Operating at 1.55 mm. IEEE Journal of Quantum Electronics, 4311, 1873-1880.
 
[3]Franta, D., Ohlídal, I., Klapetek, P., Montaigne-Ramil, A., Bonanni, A., et al. (2002) Influence of Overlayers on Deter- mination of the Optical Constants of Zn Sethin Films. Journal of Applied Physics, 92, 1873-1880. http://dx.doi.org/10.1063/1.1489068
 
[4]Klapetek, P., Ohlídal, I., Franta, D., Montaigne-Ramil, A., Bonanni, A., et al. (2003) Atomic Force Microscopy Characterization of ZnTe Epitaxial Films. Acta Physical Slovaca, 53, 223-230.
 
[5]Jenkins, C., Westwood, D.I., Elliott, M., Macdonald, J.E., Meaton, C., et al. (2001) Metrology of Semiconductor Device Structures by Cross-Sectional AFM. Materials Science and Engineering, 80, 138-141.
 
[6]Fasching, G., Schrey, F.F., Roch, T., Andrews, A.M., Brezna, W., et al. (2006) Single InAs/GaAs Quantum Dots: Pho- tocurrent and Cross-Sectional AFM Analysis. Physica E: Low-Dimensional Systems and Nanostructures, 32, 183-186. http://dx.doi.org/10.1016/j.physe.2005.12.034
 
[7]Noy, A., Sanders, C.H., Vezenov, D.V., Wong, S.S. and Lieber, C.M. (1998) Chemically-Sensitive Imaging in Tapping Mode by Chemical Force Microscopy:? Relationship between Phase Lag and Adhesion. Langmuir, 14, 1508-1511.
 
[8]García, R., Tamayo, J., Calleja, M. and García, F. (1998) Phase Contrast in Tapping-Mode Scanning Force Microscopy. Applied Physics A, 66, S309-S312.
 
[9]Xu, W., Wood-Adams, P.M. and Robertson, C.G. (2006) Measuring Local Viscoelastic Properties of Complex Materials with Tapping Mode Atomic Force Microscopy. Polymer, 47, 4798-4810. http://dx.doi.org/10.1016/j.polymer.2006.04.032
 
[10]Magonov, S.N., Elings, V. and Whangbo, M.H. (1997) Phase Imaging and Stiffness in Tapping-Mode Atomic Force Microscopy. Surface Science, 375, L385-L391.
 
[11]http://gwyddion.net/
 
[12]Horcas, I., Fernandez, R., Gomez-Rodriguez, J.M., Colchero, J., Gomez-Herrero, J., et al. (2007) WSXM: A Software for Scanning Probe Microscopy and a Tool for Nanotechnology. Review of Scientific Instruments, 78, Article ID: 013705.
 
[13]http://nanoscaleworld.bruker-axs.com/nanoscaleworld/media/p/2740.aspx                 eww150202lx
标签：

评论

发表评论

此博客中的热门博文

Does Immigration Promote the Investment of the Monopolistic Firm?

In the present paper, we examine the effect of increasing uncertainty of immigrants’ growth on the optimal timing of investment of a firm that has a monopolistic power over the labor market. It is revealed that when the uncertainty of immigrants’ growth is more than a threshold level, increasing uncertainty of immigrants’ growth accelerates the optimal timing of firms’ investment and enhances the economic growth, even if the uncertainty of immigrants’ growth is formulated by the geometric Brownian motion, which is in sharp contrast to the standard result that an increase in the uncertainty postpones the optimal timing. With an increase in the immigrants over the past ten years, workforces in the host countries have been growing significantly to the extent that the immigrants represent 70% of the increase in the workforce in Europe, and 47% in the United States as OECD indicates. In the present paper, we attempted to investigate the effect of increased uncertainty caused by the growi...
发表评论
阅读全文

Education Policy Implementation: A Mechanism for Enhancing Primary Education Development in Zanzibar

Education is one of the fundamental rights of individuals; therefore, the government of a country needs to develop and strengthen educational policy and quality as well as to ensure that everyone has equal access to basic education. The improvement of access and quality of education in the world is becoming as an essential factor in development, whereas the basic education (primary school), is acknowledged as a foundation of the higher educational development for every country. To fulfill this goal, governments introduce several policies and procedures; however, it requires some reforms and participation from the politician, policymakers, and other stakeholders to re-examine educational policy so that it can lead to multiplication and betterment of the reforms. Educational reforms actually focus on accountability. A positive educational development and reform is very challenging and needs more effort and strategy on how to use and utilize the resources effectively as such it can achie...
发表评论
阅读全文