Read full paper at: http://www.scirp.org/journal/PaperInformation.aspx?PaperID=53664#.VM8pbCzQrzE Author(s) Miguel Ángel Venegas 1 , Roberto Bernal- Correa 2 , Máximo López- López 1 , Álvaro Pulzara- Mora 2* Affiliation(s) 1 Departamento de Física, Centro de Investigación y de Estudios Avanzados del I.P.N., México D.F., México . 2 Laboratorio de Nanoestructuras Semiconductoras, Universidad Nacional de Colombia, Manizales, Colombia . ABSTRACT GaAs/In bilayers were prepared by RF Magnetron Sputtering in an Ar atmosphere on Si (100) substrates using high purity (95.95%) GaAs (100) and In targets. The growth temperatures were 300 o C and 580 o C for the high purity targets of In and GaAs, respectively. Three samples were prepared: the deposition time (td) for the GaAs layers was fixed to 30 minutes, while varied for the In layers from td = 10, 15, and 20 minutes. The morphological and optical studies of the samples were made by me...
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