Read full paper at: http://www.scirp.org/journal/PaperInformation.aspx?PaperID=51062#.VFMCGWfHRK0 Author(s) Ferdinand Gasparyan * , Hrant Khondkaryan , Mikayel Aleksanyan Affiliation(s) Department of Physics of Semiconductors and Microelectronics, Yerevan State University, Yerevan, Armenia . ABSTRACT Peculiarities of the low-frequency noise spectroscopy of hydrogen gas sensors made on MgFeO 4 n-type porous semiconductor covered by the palladium catalytic nanosize particles are investigated. Behavior of the low-frequency noise spectral density and its exponent value from sensitive layer thickness in the frequency range 2 - 300 Hz are analyzed. Sensitivity of the sensor calculated by the noise method is several ...
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