Read full paper at: http://www.scirp.org/journal/PaperInformation.aspx?PaperID=50864#.VE7_NVfHRK0 Author(s) Yu-Wei Huang , Ren-Shiou Ke , Shyi-Long Lee Affiliation(s) Department of Chemistry and Biochemistry, University of National Chung-Cheng, Chia-Yi, Taiwan . ABSTRACT The lattice kinetic Monte Carlo simulation (kMCS) was applied to study the boron diffusion in Si-SiGe beyond nanotechnology. Both the interstitialcy and kick-out mechanisms of boron diffusion were considered, including the effects of annealing temperatures, boron dopant concentrations, Ge compositions, and concentrations of Si self-interstitial defects (SiI). The effects on boron diffusion caused by single and double layer(s) of Si...
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