Read full paper at: http://www.scirp.org/journal/PaperInformation.aspx?PaperID=51692#.VHVP9WfHRK0 Author(s) S. Hamrouni 1,2* , M.F. Boujmil 2 , K. Ben Saad 1,2 Affiliation(s) 1 College of Science and Art at Rass, Qassim University, Qassim, Saudi Arabia . 2 Laboratoire de Photovoltaïque, Centre de Recherches et des Technologies de l’Energie, Technopole de Borj-Cédria, Hammam-Lif, Tunisia . ABSTRACT The Schottky diode (Al/p-CuInSe 2 /FTO) was fabricated by simple deposition of pure Aluminum on the front side of the CuInSe 2 thin film. We have investigated its electrical characteristics by measuring the current-voltage (I-V), the capacitance-voltage (C-V) and the electrical impedance in the range of temper...
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