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The Role of Sputtering Current on the Optical and Electrical Properties of Si-C Junction

Read full paper at: http://www.scirp.org/journal/PaperInformation.aspx?PaperID=47169#.VGBStmfHRK0 Author(s) Mohammad M. Uonis , Bassam M. Mustafa , Anwar M. Ezzat Affiliation(s) Department of Physics, College of Science, Mosul University, Mosul, Iraq . Department of Physics, College of Science, Mosul University, Mosul, Iraq . Department of Physics, College of Science, Mosul University, Mosul, Iraq . ABSTRACT The effect of sputtering current that flow in a carbon rod on the structural and transport properties of Si-C junction is studied. Si-C junction is fabricated by plasma sputtering in Argon gas atmosphere without catalysts with thickness of 20, 40 and 60 nm. Images of the specimen by scanning electron ...