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目前显示的是标签为“Strain”的博文

Current State of Strain in the Central Cascadia Margin Derived from Changes in Distance between GPS Stations

Read full paper at: http://www.scirp.org/journal/PaperInformation.aspx?PaperID=54188#.VPAthizQrzE Author(s)   Kenneth M. Cruikshank , Curt D. Peterson Affiliation(s) Department of Geology, Portland State University, Portland, Oregon, USA . ABSTRACT Using continuously operating Global Positioning Stations in the Pacific Northwest of the United States, over 100 station-station baseline length changes were determined along seven West-East transects, two North-South transects and in three localized areas to determine both the average annual strains over the past several years, and the variation in strain over the central Cascadia convergent margin. The North-South transects (composed of multiple baselines...

Effect of Nitriding Current Density on the Surface Properties and Crystallite Size of Pulsed Plasma-Nitrided AISI 316L

Read  full  paper  at: http://www.scirp.org/journal/PaperInformation.aspx?PaperID=53361#.VMBgxizQrzE Author(s)    C. Díaz-Guillén 1* , E. E. Granda-Gutiérrez 1 , G. Vargas-Gutiérrez 2 , M. R. Díaz-Guillén 3 , J. A. Aguilar-Martínez 4 , L. Álvarez-Contreras 5   Affiliation(s) 1 Corporación Mexicana de Investigación en Materiales S.A. de C.V.-Cátedras-CONACyT, Saltillo, México . 2 Centro de Investigación y Estudios Avanzados del IPN, Saltillo, México . 3 GMyPQ, Instituto de Investigaciones Eléctricas, Cuernavaca, México . 4 Universidad Autónoma de Nuevo León, FIME-CIIIA, Apodaca, México . 5 Centro de Investigación en Materiales Avanzados S.C., Chihuahua, México . ABSTRACT In this work, plasma-nitrided AISI 316L stainless steel samples were performed by ion nitriding process under pulsed direct current (DC) discharge at different current densities (1 to 2.5 mA/ cm 2 ). The effect of nitriding current density on the size of crystalline coheren...

A Comparative Study of Electronic Properties of Bulk MoS2 and Its Monolayer Using DFT Technique: Application of Mechanical Strain on MoS2 Monolayer

Read full paper at: http://www.scirp.org/journal/PaperInformation.aspx?PaperID=50633#.VEcehFfHRK0 Author(s)    Sohail Ahmad 1 , Sugata Mukherjee 2* Affiliation(s) 1 Department of Physics, Faculty of Science, King Khalid University, Abha, Saudi Arabia . 2 S. N. Bose National Centre for Basic Sciences, Kolkata, India . ABSTRACT Electronic structure calculation of bulk and monolayer MoS 2 has been performed using plane wave pseudopotential method based on density functional theory. The indirect band gap in the bulk MoS 2 was found to be 0.9 eV, whereas in the monolayer-MoS 2 the band gap of 1.57 eV was found to be direct one. The calculated physical parameters of monolayer MoS 2 are found to be very c...