Read full paper at: http://www.scirp.org/journal/PaperInformation.aspx?PaperID=52678#.VKC8dcCAM4 Author(s) Pranati Panda , Satya Narayana Padhi , Gana Nath Dash Affiliation(s) Electron Devices Group, School of Physics, Sambalpur University, Burla, India . ABSTRACT High frequency properties of 4H-SiC double drift region (DDR) Mixed Tunnelling Avalanche Transit Time (MITATT) diodes are studied through computer simulation method. It is interesting to observe that the efficiency of SiC (flat) DDR MITATT diode (16%) is more than 4 times that of Si (flat) DDR MITATT diode (3.59%). In addition, a power output of more than 15 times from the SiC MITATT diode compared to the Si MITATT diode is commendabl...
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