跳至主要内容

博文

目前显示的是标签为“Low Resistive TiO2”的博文

Drastic Resistivity Reduction of CVD-TiO2 Layers by Post-Wet-Treatment in HCl Solution

Read  full  paper  at: http://www.scirp.org/journal/PaperInformation.aspx?PaperID=53296#.VLyAIsnQrzE Author(s) Satoshi Yamauchi , Kazuhiro Ishibashi , Sakura Hatakeyama *   Affiliation(s) Department of Biomolecular Functional Engineering, Ibaraki University, Hitachi, Japan . ABSTRACT Poly-crystalline anatase TiO 2 layer fabricated by LPCVD using titanium-tetra-iso-propoxide and NbF 5 in H 2 -ambient was treated in conc.-HCl solution after thin layer of IIIb-group metal was deposited on the TiO 2 layer. Resistivity of the as-deposited layer about 1 × 10 -1 Ω·cm was drastically reduced to 3 × 10 -3 Ω·cm by the wet-treatment using indium. Temperature dependence of the resistivity increased with temperature above 100 K for the wet-treated layer was quite different from that decreased above 100 K for the as-deposited layer, whereas the resistivity was saturated at lower temperatures. The resistivity at room-temperature was decreased with th...

Low Pressure Chemical Vapor Deposition of TiO2 Layer in Hydrogen-Ambient

Read full paper at: http://www.scirp.org/journal/PaperInformation.aspx?PaperID=50286#.VDSJZFfHRK0 Author(s) Satoshi Yamauchi , Kazuhiro Ishibashi , Sakura Hatakeyama Affiliation(s) Department of Biomolecular Functional Engineering, Ibaraki University, Hitachi, Japan . ABSTRACT Low pressure chemical vapor deposition (LPCVD) of anatase TiO 2  as a reduction gas was demonstrated at pres- sure of 3 mtorr in comparison to that using TTIP and O 2 with study for the property of the layers. Dissociation energy of TTIP in H 2 was higher than that in O 2 but resistivity of the layer deposited in H 2 was significantly decreased to 0.2 Ω cm in contrast to the high resistivity beyond 100 Ω cm of the layer deposited in O 2 . UV-Vis optical transmissi...