Surface Roughness Modification of Free Standing Single Crystal Silicon Microstructures Using KrF Excimer Laser Treatment for Mechanical Performance Improvement
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http://www.scirp.org/journal/PaperInformation.aspx?PaperID=52943#.VK3YEMnQrzE
Affiliation(s)
1Department of Micro Engineering, Kyoto University, Kyoto, Japan.
2Zewail City of Science and Technology, Cairo, Egypt.
2Zewail City of Science and Technology, Cairo, Egypt.
ABSTRACT
Single
crystal silicon freestanding structures for tensile and fatigue testing
were treated with KrF excimer laser to improve surface roughness and
accordingly mechanical performance. Sample thickness was 5 μm. Localized
laser treatment was successful in eliminating the scallops developed
during Bosch process and in reducing surface roughness. Harsh
irradiation at laser energies up to 4 J/cm2 was only possible
due to localized treatment without significant vibrations occurring on
the freestanding samples that led to fracture in preliminary experiments
at energies as low as 0.16 J/cm2. Finite element analysis
was used to investigate the temperature distribution on the irradiated
structures. Atomic force microscopy (AFM) and Raman spectroscopy were
also used to assess surface roughness, crystallinity changes and surface
stresses developing on surfaces subjected to perpendicular laser
irradiation. At a high energy (3.2 J/cm2) the top surface
showed a decrease of roughness compared to fabricated samples. Raman
spectroscopy showed the dominance of crystalline silicon after laser
irradiation. The effects of laser energy, number of pulses
KEYWORDS
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