Thin AlOx films were grown on 4H-SiC by
plasma-assisted atomic layer deposition (ALD) and plasma assisted electron-beam
evaporation at 300°C. After deposition, the films were annealed in nitrogen at
temperatures between 500°C and 1050°C. The films were analyzed by X-ray
reflectivity (XRR) and atomic force microscopy (AFM) in order to determine film
thickness, surface roughness and density of the AlOx layer. As a result, Annealing
at temperatures > 800˚C results in crystallization, a mass loss of ~5% was
determined and attributed to the presence of aluminum oxyhydroxide in as
deposited films. All changes in film properties after high temperature
annealing appear to be independent of the deposition technique.
Article by researchers from Fraunhofer
Institute for Applied Solid State Physics, and Ilmenau University of
Technology, Germany.
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