跳至主要内容

Numerical Simulations of Nonlinear Interaction of Space Charge Waves in Microwave and Millimeter Wave Range in n-InN Films Using Negative Differential Conductivity

Read full paper at:
http://www.scirp.org/journal/PaperInformation.aspx?PaperID=47928#.VFbpoGfHRK0

Numerical simulations of nonlinear interaction of space charge waves in microwave and millimeter wave range in n-InN films have been carried out. A micro- and millimeter-waves frequency conversion using the negative differential conductivity phenomenon is carried out when the harmonics of the input signal are generated. An increment in the amplification is observed in n-InN films at essentially at high-frequencies f < 450 GHz, when compared with n-GaAs films f < 44 GHz. This work provides a way to achieve a frequency conversion and amplification of micro- and millimeter-waves.
Cite this paper
Garcia-Barrientos, A. and Grimalsky, V. (2014) Numerical Simulations of Nonlinear Interaction of Space Charge Waves in Microwave and Millimeter Wave Range in n-InN Films Using Negative Differential Conductivity. Modeling and Numerical Simulation of Material Science, 4, 136-142. doi: 10.4236/mnsms.2014.43015. 
 

[1] Wu, J., Walukiewicz, W., Shan, W., Yu, K.M., Ager III, J.W., Haller, E.E., Lu, H. and Schaff, W.J. (2002) Effects of the Narrow Band Gap on the Properties of InN. Physical Review B, 66, Article ID: 201403.
http://dx.doi.org/10.1103/PhysRevB.66.201403
[2] Wu, J., Walukiewicz, W., Yu, K.M., Ager III, J.W., Haller, E.E., Lu, H., Schaff, W.J., Saito, Y. and Nanishi, Y. (2002) Unusual Properties of the Fundamental Band Gap of InN. Applied Physics Letters, 80, 3967-3969.
[3] Garcia, A., Grimalsky, V., Gutierrez, E. and Palankovski, V. (2009) Nonstationary Effects of the Space Charge in Semiconductor Structures. Journal of Applied Physics, 105, Article ID: 074501.
http://dx.doi.org/10.1063/1.3093689
[4] Garcia-Barrientos, A. and Palankovski, V. (2011) Numerical Simulations of Space Charge Waves in InP Films and Microwave Frequency Conversion under Negative Differential Conductivity. Applied Physics Letters, 98, 072110-1- 072110-3.
[5] Koshevaya, S.V., Grimalsky, V.V., Garcia-B, A. and Diaz-A, F. (2012) Amplification and Nonlinear Interaction of Space Charge Waves of Microwave Band in Heterogeneous Gallium Nitride Films. Radioelectronics and Communications Systems, 55, 289-298.
http://dx.doi.org/10.3103/S0735272712070011
[6] Schley, P., Goldhahn, R., Gobsch, G., Feneberg, M., Thonke, K., Wang, X. and Yoshikawa, A. (2009) Influence of Strain on the Band Gap Energy of Wurtzite InN. Physica Status Solidi (b), 246, 1177-1180.
http://dx.doi.org/10.1002/pssb.200880924
[7] Beck, A.H.W. (1958) Space-Charge Waves and Slow Electromagnetic Waves. Pergamon, New York.
[8] Dean, R.H., Dreeben, A.B., Kaminski, J.F. and Triano, A. (1970) Travelling-Wave Amplifier Using Thin Epitaxial GaAs Layer. Electronics Letters, 6, 775-776.
[9] Scott, A. (1970) Active and Nonlinear Wave Propagation in Electronics. John Wiley & Sons, New York.
[10] Carnez, B., Cappy, A., Kaszynskii, A., Constant, E. and Salmer, G. (1980) Modeling of a Submicrometer Gate Field-Effect Transistor Including Effects of Nonstationary Electron Dynamics. Journal of Applied Physics, 51, 784-790.
http://dx.doi.org/10.1063/1.327292
[11] Mikhailov, A.I. (2000) Experimental Study of the Parametric Interaction between Space-Charge Waves in Thin-Film GaAs-Based Semiconductor Structures. Technical Physics Letters, 26, 217-219.
http://dx.doi.org/10.1134/1.1262796
[12] Lu, H., Schaff, W.J., Eastman, L.F. and Stutz, C.E. (2003) Surface Charge Accumulation of InN Films Grown by Molecular-Beam Epitaxy. Applied Physics Letters, 82, 1736.
http://dx.doi.org/10.1063/1.1562340
[13] Tansley, T. and Foley, C. (1984) Electron Mobility in Indium Nitride. Electronics Letters, 20, 1066-1068.
http://dx.doi.org/10.1049/el:19840729
[14] Yamamoto, A., Shin-ya, T., Sugiura, T. and Hashimoto, A. (1998) Electron Mobility in Indium Nitride. Journal of Crystal Growth, 189/190, 461-465.
http://dx.doi.org/10.1016/S0022-0248(98)00331-5
[15] Franssen, G., Suski, T., Perlin, P., Teisseyre, H., Khachapuridze, A., Dmowski, L.H., Plesiewicz, J.A., Kaminska, A., Kurouchi, M., Nanishi, Y., Lu, H. and Schaff, W. (2006) Band-to-Band Character of Photoluminescence from InN and In-Rich InGaN Revealed by Hydrostatic Pressure Studies. Applied Physics Letters, 89, Article ID: 121915.
http://dx.doi.org/10.1063/1.2356994
[16] Polyakov, V. and Schwierz, F. (2006) Low-Field Electron Mobility in Wurtzite InN. Applied Physics Letters, 88, 032101-1-032101-3.
http://dx.doi.org/10.1063/1.2166195
[17] Bougrov, V., Levinshtein, M.E., Rumyantsev, S.L. and Zubrilov, A. (2001) Properties of Advanced Semiconductor Materials GaN, AlN, InN, BN, SiC, SiGe. In: Levinshtein, M.E., Rumyantsev, S.L. and Shur M.S., Eds., John Wiley & Sons, Inc., New York, 1-30.                          eww141103lx
标签：

评论

发表评论

此博客中的热门博文

Does Immigration Promote the Investment of the Monopolistic Firm?

In the present paper, we examine the effect of increasing uncertainty of immigrants’ growth on the optimal timing of investment of a firm that has a monopolistic power over the labor market. It is revealed that when the uncertainty of immigrants’ growth is more than a threshold level, increasing uncertainty of immigrants’ growth accelerates the optimal timing of firms’ investment and enhances the economic growth, even if the uncertainty of immigrants’ growth is formulated by the geometric Brownian motion, which is in sharp contrast to the standard result that an increase in the uncertainty postpones the optimal timing. With an increase in the immigrants over the past ten years, workforces in the host countries have been growing significantly to the extent that the immigrants represent 70% of the increase in the workforce in Europe, and 47% in the United States as OECD indicates. In the present paper, we attempted to investigate the effect of increased uncertainty caused by the growi...
发表评论
阅读全文

Education Policy Implementation: A Mechanism for Enhancing Primary Education Development in Zanzibar

Education is one of the fundamental rights of individuals; therefore, the government of a country needs to develop and strengthen educational policy and quality as well as to ensure that everyone has equal access to basic education. The improvement of access and quality of education in the world is becoming as an essential factor in development, whereas the basic education (primary school), is acknowledged as a foundation of the higher educational development for every country. To fulfill this goal, governments introduce several policies and procedures; however, it requires some reforms and participation from the politician, policymakers, and other stakeholders to re-examine educational policy so that it can lead to multiplication and betterment of the reforms. Educational reforms actually focus on accountability. A positive educational development and reform is very challenging and needs more effort and strategy on how to use and utilize the resources effectively as such it can achie...
发表评论
阅读全文